Irf9620pbf datasheet 2n3904

2n3904s revision no : 4 c 0 collector current i (ma) collector current i (ma) 0 c 0 base-emitter voltage v (v)be i - vc be 10 dc current gain h fe 0.1 0.3 1 3 collector current i (ma)c 0 collector-emitter voltage v (v)ce i - vc ce h - i collector current i (ma)c collector-emitter saturation ce(sat) v - i

2N3904 Datasheet (PDF) 1.1. 2n3904g.pdf Size:398K _upd SEMICONDUCTOR 2N3904 TECHNICAL DATA FEATURE NPN silicon epitaxial planar transistor for switching and TO-92 Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended 1. EMITTER 2. BASE 3.

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NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted * NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* T A = 25°C unless otherwise noted * It is a little more powerful than the 2n3904. Most likely the current gain is less, and and maybe also the maximal voltages. Depending on your application that may be OK, which is quite likely if it is not too demanding. The correct thing would for you to check the numbers in the data sheet. PRELIMINARY IRFP9140N HEXFET® Power MOSFET PD - 9.1492A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides ...